Vishay SiR588DP Type N-Channel MOSFET, 59.5 A, 80 V, 8-Pin PowerPAK SO-8 SiR588DP-T1-RE3
- RS庫存編號:
- 239-5394
- 製造零件編號:
- SiR588DP-T1-RE3
- 製造商:
- Vishay
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TWD260.00
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TWD273.00
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 40 | TWD26.00 | TWD260.00 |
| 50 - 90 | TWD25.20 | TWD252.00 |
| 100 - 240 | TWD24.40 | TWD244.00 |
| 250 - 990 | TWD23.80 | TWD238.00 |
| 1000 + | TWD23.10 | TWD231.00 |
* 參考價格
- RS庫存編號:
- 239-5394
- 製造零件編號:
- SiR588DP-T1-RE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 59.5A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PowerPAK SO-8 | |
| Series | SiR588DP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.008Ω | |
| Maximum Power Dissipation Pd | 59.5W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 14.2nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 6.15mm | |
| Width | 5.15mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 59.5A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PowerPAK SO-8 | ||
Series SiR588DP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.008Ω | ||
Maximum Power Dissipation Pd 59.5W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 14.2nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 6.15mm | ||
Width 5.15mm | ||
Automotive Standard No | ||
Vishay SiR588DP Series MOSFET, 80V Maximum Drain Source Voltage, 59.5A Maximum Continuous Drain Current - SiR588DP-T1-RE3
This n-channel MOSFET is a surface-mount power transistor designed to switch and handle high currents in Compact electronic assemblies. It operates across a wide temperature span and is suited to applications requiring robust voltage handling and efficient conduction in a small package.
Features and Benefits:
• 80V drain voltage enables high-voltage switching applications • 59.5A continuous drain current supports heavy-load operation • 0.008Ω low Rds(on) reduces conduction losses and heating • 14.2nC typical gate charge enables Faster switching transitions • 59.5W power dissipation allows sustained power handling • 150°C maximum operating temperature tolerates elevated thermal environments
Applications
• Suitable for motor drive stages in industrial automation systems • Ideal for high-current DC-DC converters and power supplies • Used for switching elements in power distribution modules • Can be used for load switching in HVAC and control equipment • Suitable for Compact SMD power assemblies where board space is limited
What gate voltage constraints must be observed for safe operation?
The gate-to-source voltage must be kept within ±20V to prevent gate oxide stress.
How does the package affect thermal management on a board?
The PowerPAK SO-8 8-pin surface-mount package concentrates the thermal path through the substrate, so good PCB copper area and thermal vias improve heat dissipation.
What ambient conditions define the devices operational limits?
The device is specified for use down to -55°C and up to 150°C junction temperature for high-temperature environments.
How does the devices forward voltage relate to conduction behaviour?
The forward voltage of 1.1V indicates the expected diode conduction drop when the intrinsic body diode conducts during reverse-recovery or hard commutation events.
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