Vishay SiR588DP Type N-Channel MOSFET, 59.5 A, 80 V, 8-Pin PowerPAK SO-8 SiR588DP-T1-RE3

此圖片僅供參考,請參閲產品詳細資訊及規格

可享批量折扣
查看批量定價選項

小計(1 包,共 10 件)*

TWD260.00

(不含稅)

TWD273.00

(含稅)

Add to Basket
選擇或輸入數量
有庫存
  • 2,850 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位
每單位
每包*
10 - 40TWD26.00TWD260.00
50 - 90TWD25.20TWD252.00
100 - 240TWD24.40TWD244.00
250 - 990TWD23.80TWD238.00
1000 +TWD23.10TWD231.00

* 參考價格

包裝方式:
RS庫存編號:
239-5394
製造零件編號:
SiR588DP-T1-RE3
製造商:
Vishay
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

59.5A

Maximum Drain Source Voltage Vds

80V

Package Type

PowerPAK SO-8

Series

SiR588DP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.008Ω

Maximum Power Dissipation Pd

59.5W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

14.2nC

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

6.15mm

Width

5.15mm

Automotive Standard

No

Vishay SiR588DP Series MOSFET, 80V Maximum Drain Source Voltage, 59.5A Maximum Continuous Drain Current - SiR588DP-T1-RE3


This n-channel MOSFET is a surface-mount power transistor designed to switch and handle high currents in Compact electronic assemblies. It operates across a wide temperature span and is suited to applications requiring robust voltage handling and efficient conduction in a small package.

Features and Benefits:


• 80V drain voltage enables high-voltage switching applications • 59.5A continuous drain current supports heavy-load operation • 0.008Ω low Rds(on) reduces conduction losses and heating • 14.2nC typical gate charge enables Faster switching transitions • 59.5W power dissipation allows sustained power handling • 150°C maximum operating temperature tolerates elevated thermal environments

Applications


• Suitable for motor drive stages in industrial automation systems • Ideal for high-current DC-DC converters and power supplies • Used for switching elements in power distribution modules • Can be used for load switching in HVAC and control equipment • Suitable for Compact SMD power assemblies where board space is limited

What gate voltage constraints must be observed for safe operation?


The gate-to-source voltage must be kept within ±20V to prevent gate oxide stress.

How does the package affect thermal management on a board?


The PowerPAK SO-8 8-pin surface-mount package concentrates the thermal path through the substrate, so good PCB copper area and thermal vias improve heat dissipation.

What ambient conditions define the device’s operational limits?


The device is specified for use down to -55°C and up to 150°C junction temperature for high-temperature environments.

How does the device’s forward voltage relate to conduction behaviour?


The forward voltage of 1.1V indicates the expected diode conduction drop when the intrinsic body diode conducts during reverse-recovery or hard commutation events.

相關連結

第一時間了解我們的最新產品和優惠

電郵

您在訂閱此郵件時提供的個人信息將根據《隱私政策》進行處理。