製造零件編號

Vishay SiR Type N-Channel MOSFET, 116 A, 80 V, 8-Pin PowerPAK SO-8 SiR582DP-T1-RE3

RS庫存編號:: 239-5386
製造零件編號:: SiR582DP-T1-RE3
製造商:: Vishay

Vishay SiR Type N-Channel MOSFET, 116 A, 80 V, 8-Pin PowerPAK SO-8 SiR582DP-T1-RE3

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 3000 件）*

TWD78,600.00

(不含稅)

TWD82,530.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

3,000 件準備從其他地點送貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
3000 - 12000	TWD26.20	TWD78,600.00
15000 +	TWD25.50	TWD76,500.00

* 參考價格

RS庫存編號:: 239-5386
製造零件編號:: SiR582DP-T1-RE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	116A
	Maximum Drain Source Voltage Vds	80V
	Series	SiR
	Package Type	PowerPAK SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.0034Ω
	Maximum Gate Source Voltage Vgs	±20 V
	Maximum Power Dissipation Pd	92.5W
	Typical Gate Charge Qg @ Vgs	33.5nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	5.15 mm
	Standards/Approvals	RoHS
	Length	6.15mm

	選取全部
	品牌 Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 116A
	Maximum Drain Source Voltage Vds 80V
	Series SiR
	Package Type PowerPAK SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.0034Ω
	Maximum Gate Source Voltage Vgs ±20 V
	Maximum Power Dissipation Pd 92.5W
	Typical Gate Charge Qg @ Vgs 33.5nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 5.15 mm
	Standards/Approvals RoHS
	Length 6.15mm

Datasheet - SiR582DP-T1-RE3

The Vishay TrenchFET N channel power MOSFET has drain current of 116 A. It is used in synchronous rectification, primary side switch, DC/DC converter and motor drive switch.

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

100 % Rg and UIS tested

Vishay SiR Type N-Channel MOSFET, 116 A, 80 V, 8-Pin PowerPAK SO-8 SiR582DP-T1-RE3

訂單超過 $1,300.00 免費送貨

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