Vishay SiR Type N-Channel MOSFET, 59.5 A, 80 V, 8-Pin PowerPAK SO-8 SiR588DP-T1-RE3
- RS庫存編號:
- 239-5393
- 製造零件編號:
- SiR588DP-T1-RE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 3000 件）*
TWD42,600.00
(不含稅)
TWD44,730.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年4月12日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | TWD14.20 | TWD42,600.00 |
| 15000 + | TWD13.80 | TWD41,400.00 |
* 參考價格
- RS庫存編號:
- 239-5393
- 製造零件編號:
- SiR588DP-T1-RE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 59.5A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PowerPAK SO-8 | |
| Series | SiR | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.008Ω | |
| Typical Gate Charge Qg @ Vgs | 14.2nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 59.5W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.15mm | |
| Width | 5.15 mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 59.5A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PowerPAK SO-8 | ||
Series SiR | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.008Ω | ||
Typical Gate Charge Qg @ Vgs 14.2nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 59.5W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Length 6.15mm | ||
Width 5.15 mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay TrenchFET N channel power MOSFET has drain current of 59.5 A. It is used in synchronous rectification, primary side switch, DC/DC converter and motor drive switch.
Very low RDS x Qg figure-of-merit (FOM)
Tuned for the lowest RDS x Qoss FOM
100 % Rg and UIS tested
相關連結
- Vishay SiR Type N-Channel MOSFET 80 V, 8-Pin PowerPAK SO-8 SiR588DP-T1-RE3
- Vishay SiR Type N-Channel MOSFET 80 V, 8-Pin PowerPAK SO-8 SiR584DP-T1-RE3
- Vishay SiR Type N-Channel MOSFET 80 V, 8-Pin PowerPAK SO-8 SiR586DP-T1-RE3
- Vishay SiR Type N-Channel MOSFET 80 V, 8-Pin PowerPAK SO-8 SiR582DP-T1-RE3
- Vishay SiR Type N-Channel MOSFET 60 V, 8-Pin PowerPAK SO-8 SiR4602LDP-T1-RE3
- Vishay SiR Type N-Channel MOSFET 150 V Enhancement, 8-Pin PowerPAK SO-8 SIR5710DP-T1-RE3
- Vishay SiR Type N-Channel MOSFET 150 V Enhancement, 8-Pin PowerPAK SO-8 SIR5708DP-T1-RE3
- Vishay SiR Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK SO-8 SIR184LDP-T1-RE3