Vishay SIB Type P-Channel MOSFET, 4.5 A, 30 V P, 6-Pin PowerPAK SC-75 SIB4317EDK-T1-GE3
- RS庫存編號:
- 239-5375
- 製造零件編號:
- SIB4317EDK-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 包,共 25 件)*
TWD265.00
(不含稅)
TWD278.25
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 6,050 件從 2026年1月05日 起發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 25 | TWD10.60 | TWD265.00 |
| 50 - 75 | TWD10.30 | TWD257.50 |
| 100 - 225 | TWD10.10 | TWD252.50 |
| 250 - 975 | TWD9.80 | TWD245.00 |
| 1000 + | TWD9.50 | TWD237.50 |
* 參考價格
- RS庫存編號:
- 239-5375
- 製造零件編號:
- SIB4317EDK-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SIB | |
| Package Type | PowerPAK SC-75 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.065Ω | |
| Channel Mode | P | |
| Typical Gate Charge Qg @ Vgs | 6.6nC | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Gate Source Voltage Vgs | ±12 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 1.6 mm | |
| Length | 1.6mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SIB | ||
Package Type PowerPAK SC-75 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.065Ω | ||
Channel Mode P | ||
Typical Gate Charge Qg @ Vgs 6.6nC | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Gate Source Voltage Vgs ±12 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 1.6 mm | ||
Length 1.6mm | ||
Automotive Standard No | ||
The Vishay P channel MOSFET has drain current of -4.5 A. It is used for Portable devices such as smart phones, tablet PCs and mobile computing
Typical ESD protection (MOSFET): 1500 V (HBM)
100 % Rg tested
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