Infineon ISC Type N-Channel MOSFET, 192 A, 100 V, 8-Pin TDSON ISC027N10NM6ATMA1
- RS庫存編號:
- 235-4865
- 製造零件編號:
- ISC027N10NM6ATMA1
- 製造商:
- Infineon
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- RS庫存編號:
- 235-4865
- 製造零件編號:
- ISC027N10NM6ATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 192A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | ISC | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.24mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 245W | |
| Typical Gate Charge Qg @ Vgs | 91nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.1mm | |
| Standards/Approvals | No | |
| Length | 6.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 192A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series ISC | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.24mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 245W | ||
Typical Gate Charge Qg @ Vgs 91nC | ||
Maximum Operating Temperature 175°C | ||
Height 5.1mm | ||
Standards/Approvals No | ||
Length 6.1mm | ||
Automotive Standard No | ||
The Infineon OptiMOS™ 6 industrial power MOSFET 100V is designed for high switching frequency application such as telecom and server power supply, but also the Ideal choice for other applications such as solar, power tools and drones. Compared to alternative products, Infineon’s leading thin wafer technology is enabling significant performance benefits.
Lower and softer reverse recovery charge
Ideal for high switching frequency
High avalanche energy rating
RoHS compliant
Low conduction losses
Low switching losses
Environmentally friendly
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