Infineon ISC Type N-Channel MOSFET, 97 A, 100 V, 8-Pin TDSON ISC060N10NM6ATMA1
- RS庫存編號:
- 235-4869
- 製造零件編號:
- ISC060N10NM6ATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 2 件）*
TWD151.00
(不含稅)
TWD158.56
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD75.50 | TWD151.00 |
| 10 - 98 | TWD74.50 | TWD149.00 |
| 100 - 248 | TWD72.50 | TWD145.00 |
| 250 - 498 | TWD71.50 | TWD143.00 |
| 500 + | TWD69.50 | TWD139.00 |
* 參考價格
- RS庫存編號:
- 235-4869
- 製造零件編號:
- ISC060N10NM6ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 97A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | ISC | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6mΩ | |
| Maximum Power Dissipation Pd | 125W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.35mm | |
| Length | 6.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 97A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series ISC | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6mΩ | ||
Maximum Power Dissipation Pd 125W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Maximum Operating Temperature 175°C | ||
Height 5.35mm | ||
Length 6.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon OptiMOS™ 6 industrial power MOSFET 100V is designed for high switching frequency application such as telecom and server power supply, but also the Ideal choice for other applications such as solar, power tools and drones. Compared to alternative products, Infineon’s leading thin wafer technology is enabling significant performance benefits.
Lower and softer reverse recovery charge
Ideal for high switching frequency
High avalanche energy rating
RoHS compliant
Low conduction losses
Low switching losses
Environmentally friendly
相關連結
- Infineon ISC Type N-Channel MOSFET 100 V, 8-Pin TDSON ISC060N10NM6ATMA1
- Infineon ISC Type N-Channel MOSFET 100 V, 8-Pin TDSON ISC027N10NM6ATMA1
- Infineon ISC Type N-Channel MOSFET 100 V, 8-Pin TDSON ISC030N10NM6ATMA1
- Infineon ISC Type N-Channel MOSFET 100 V, 8-Pin TDSON ISC230N10NM6ATMA1
- Infineon ISC Type N-Channel MOSFET 100 V, 8-Pin TDSON ISC080N10NM6ATMA1
- Infineon ISC Type N-Channel MOSFET 60 V Enhancement, 8-Pin TDSON
- Infineon ISC Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON
- Infineon ISC Type N-Channel N-Channel Mosfet 120 V Enhancement, 8-Pin PG-TDSON-8 ISC078N12NM6ATMA1