Infineon Dual N IPG 2 Type N-Channel Power Transistor, 20 A, 40 V Enhancement, 8-Pin SuperSO
- RS庫存編號:
- 229-1842
- 製造零件編號:
- IPG20N04S412AATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 5000 件）*
TWD74,000.00
(不含稅)
TWD77,700.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 5,000 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 5000 - 5000 | TWD14.80 | TWD74,000.00 |
| 10000 + | TWD14.30 | TWD71,500.00 |
* 參考價格
- RS庫存編號:
- 229-1842
- 製造零件編號:
- IPG20N04S412AATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IPG | |
| Package Type | SuperSO | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 12.19mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 41W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual N | |
| Standards/Approvals | AEC Q101, RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IPG | ||
Package Type SuperSO | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 12.19mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 41W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual N | ||
Standards/Approvals AEC Q101, RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon dual n channel normal level MOSFET has same thermal and electrical performance as a DPAK with the same die size. It's exposed pad provides excellent thermal transfer. It is two n channel in one package with 2 isolated lead frames.
It is RoHS compliant and AEC Q101 qualified
It has 175°C operating temperature
相關連結
- Infineon Dual N IPG 2 Type N-Channel Power Transistor 40 V Enhancement, 8-Pin SuperSO IPG20N04S412AATMA1
- Infineon Dual IPG 2 Type N-Channel Power Transistor 40 V Enhancement, 8-Pin SuperSO
- Infineon Dual IPG 2 Type N-Channel Power Transistor 40 V Enhancement, 8-Pin SuperSO IPG20N04S4L11AATMA1
- Infineon Dual N Channel Normal Level IPG 2 Type N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO
- Infineon IPG Dual N-Channel MOSFET 40 V P TDSON
- Infineon IPG Dual N-Channel MOSFET 40 V P TDSON IPG20N04S4L08ATMA1
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 8-Pin SuperSO
- Infineon IPC Type N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO