Infineon Dual N IPG 2 Type N-Channel Power Transistor, 20 A, 40 V Enhancement, 8-Pin SuperSO IPG20N04S412AATMA1

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小計(1 包,共 15 件)*

TWD445.50

(不含稅)

TWD467.70

(含稅)

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單位
每單位
每包*
15 - 15TWD29.70TWD445.50
30 - 75TWD28.90TWD433.50
90 - 225TWD28.30TWD424.50
240 - 465TWD27.40TWD411.00
480 +TWD26.90TWD403.50

* 參考價格

包裝方式:
RS庫存編號:
229-1843
製造零件編號:
IPG20N04S412AATMA1
製造商:
Infineon
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品牌

Infineon

Product Type

Power Transistor

Channel Type

Type N

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

40V

Series

IPG

Package Type

SuperSO

Pin Count

8

Maximum Drain Source Resistance Rds

12.19mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

41W

Typical Gate Charge Qg @ Vgs

14nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Transistor Configuration

Dual N

Standards/Approvals

AEC Q101, RoHS

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

The Infineon dual n channel normal level MOSFET has same thermal and electrical performance as a DPAK with the same die size. It's exposed pad provides excellent thermal transfer. It is two n channel in one package with 2 isolated lead frames.

It is RoHS compliant and AEC Q101 qualified

It has 175°C operating temperature

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