Infineon Dual N Channel Normal Level IPG 2 Type N-Channel MOSFET, 20 A, 40 V Enhancement, 8-Pin SuperSO
- RS庫存編號:
- 229-1841
- 製造零件編號:
- IPG20N04S409ATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD447.00
(不含稅)
TWD469.40
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 15,000 件從 2026年1月19日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 10 | TWD44.70 | TWD447.00 |
| 20 - 90 | TWD43.70 | TWD437.00 |
| 100 - 240 | TWD42.40 | TWD424.00 |
| 250 - 490 | TWD41.40 | TWD414.00 |
| 500 + | TWD40.50 | TWD405.00 |
* 參考價格
- RS庫存編號:
- 229-1841
- 製造零件編號:
- IPG20N04S409ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SuperSO | |
| Series | IPG | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8.6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 54W | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Transistor Configuration | Dual N Channel Normal Level | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.9 mm | |
| Length | 5.15mm | |
| Standards/Approvals | RoHS Compliant | |
| Height | 1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SuperSO | ||
Series IPG | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8.6mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 54W | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Transistor Configuration Dual N Channel Normal Level | ||
Maximum Operating Temperature 175°C | ||
Width 5.9 mm | ||
Length 5.15mm | ||
Standards/Approvals RoHS Compliant | ||
Height 1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon dual n channel normal level MOSFET has same thermal and electrical performance as a DPAK with the same die size. It's exposed pad provides excellent thermal transfer. It is two n channel in one package with 2 isolated lead frames.
It is RoHS compliant and AEC Q101 qualified
It has 175°C operating temperature
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