Infineon Dual N Channel Normal Level IPG 2 Type N-Channel MOSFET, 20 A, 40 V Enhancement, 8-Pin SuperSO

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TWD447.00

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TWD469.40

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10 - 10TWD44.70TWD447.00
20 - 90TWD43.70TWD437.00
100 - 240TWD42.40TWD424.00
250 - 490TWD41.40TWD414.00
500 +TWD40.50TWD405.00

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包裝方式:
RS庫存編號:
229-1841
製造零件編號:
IPG20N04S409ATMA1
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

40V

Series

IPG

Package Type

SuperSO

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

8.6mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

54W

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

28nC

Maximum Gate Source Voltage Vgs

±20 V

Transistor Configuration

Dual N Channel Normal Level

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Height

1mm

Length

5.15mm

Width

5.9 mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

The Infineon dual n channel normal level MOSFET has same thermal and electrical performance as a DPAK with the same die size. It's exposed pad provides excellent thermal transfer. It is two n channel in one package with 2 isolated lead frames.

It is RoHS compliant and AEC Q101 qualified

It has 175°C operating temperature

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