Infineon AUIRF Type N-Channel MOSFET, 545 A, 40 V Enhancement, 15-Pin DirectFET
- RS庫存編號:
- 229-1737
- 製造零件編號:
- AUIRF8739L2TR
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 4000 件）*
TWD561,600.00
(不含稅)
TWD589,680.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2028年2月11日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 4000 - 4000 | TWD140.40 | TWD561,600.00 |
| 8000 + | TWD136.10 | TWD544,400.00 |
* 參考價格
- RS庫存編號:
- 229-1737
- 製造零件編號:
- AUIRF8739L2TR
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 545A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | AUIRF | |
| Package Type | DirectFET | |
| Mount Type | Surface | |
| Pin Count | 15 | |
| Maximum Drain Source Resistance Rds | 0.6mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 375nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 40 V | |
| Maximum Power Dissipation Pd | 340W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 9.15mm | |
| Height | 0.74mm | |
| Width | 7.1 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 545A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series AUIRF | ||
Package Type DirectFET | ||
Mount Type Surface | ||
Pin Count 15 | ||
Maximum Drain Source Resistance Rds 0.6mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 375nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 40 V | ||
Maximum Power Dissipation Pd 340W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 9.15mm | ||
Height 0.74mm | ||
Width 7.1 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon single n channel HEXFET power MOSFET in a DirectFET L8 package allows repetitive avalanche up to Tjmax. It has fast switching speed and it is lead free.
It is RoHS compliant and AEC qualified
It has 175°C operating temperature
It has dual sided cooling
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