Vishay TrenchFET Type N-Channel MOSFET, 114 A, 40 V Enhancement, 4-Pin SO-8 SQJ152EP-T1_GE3
- RS庫存編號:
- 228-2957
- 製造零件編號:
- SQJ152EP-T1_GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD268.00
(不含稅)
TWD281.40
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年8月20日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 40 | TWD26.80 | TWD268.00 |
| 50 - 90 | TWD26.10 | TWD261.00 |
| 100 - 240 | TWD25.40 | TWD254.00 |
| 250 - 990 | TWD24.80 | TWD248.00 |
| 1000 + | TWD24.30 | TWD243.00 |
* 參考價格
- RS庫存編號:
- 228-2957
- 製造零件編號:
- SQJ152EP-T1_GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 114A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 5.1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 136W | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 114A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SO-8 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 5.1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 136W | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay TrenchFET automotive N-channel is 40 V power MOSFET.
100 % Rg and UIS tested
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