製造零件編號

Vishay TrenchFET Type N-Channel MOSFET, 500 A, 30 V Enhancement, 4-Pin SO-8 SQJ126EP-T1_GE3

RS庫存編號:: 228-2950
製造零件編號:: SQJ126EP-T1_GE3
製造商:: Vishay

Vishay TrenchFET Type N-Channel MOSFET, 500 A, 30 V Enhancement, 4-Pin SO-8 SQJ126EP-T1_GE3

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可享批量折扣

小計（1 包，共 5 件）*

TWD218.00

(不含稅)

TWD228.90

庫存資訊目前無法存取 - 請稍後再回來查看

單位	每單位	每包*
5 - 45	TWD43.60	TWD218.00
50 - 95	TWD42.60	TWD213.00
100 - 245	TWD41.40	TWD207.00
250 - 995	TWD40.40	TWD202.00
1000 +	TWD39.20	TWD196.00

* 參考價格

RS庫存編號:: 228-2950
製造零件編號:: SQJ126EP-T1_GE3
製造商:: Vishay

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	500A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SO-8
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	0.94mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.1V
	Maximum Power Dissipation Pd	500W
	Typical Gate Charge Qg @ Vgs	101nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	選取全部
	品牌 Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 500A
	Maximum Drain Source Voltage Vds 30V
	Package Type SO-8
	Series TrenchFET
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 0.94mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.1V
	Maximum Power Dissipation Pd 500W
	Typical Gate Charge Qg @ Vgs 101nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Automotive Standard AEC-Q101

Datasheet - SQJ126EP-T1_GE3

The Vishay TrenchFET automotive N-channel is 30 V power MOSFET.

100 % Rg and UIS tested

Vishay TrenchFET Type N-Channel MOSFET, 500 A, 30 V Enhancement, 4-Pin SO-8 SQJ126EP-T1_GE3

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