Vishay TrenchFET N channel-Channel MOSFET, 373 A, 60 V Enhancement, 8-Pin SO-8SW SQRS160EP-T1_GE3
- RS庫存編號:
- 735-238
- 製造零件編號:
- SQRS160EP-T1_GE3
- 製造商:
- Vishay
N
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| 100 - 499 | TWD49.00 |
| 500 + | TWD48.00 |
* 參考價格
- RS庫存編號:
- 735-238
- 製造零件編號:
- SQRS160EP-T1_GE3
- 製造商:
- Vishay
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 373A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SO-8SW | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.002Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 130nC | |
| Maximum Power Dissipation Pd | 270W | |
| Maximum Operating Temperature | 175°C | |
| Length | 6mm | |
| Standards/Approvals | RoHS Compliant | |
| Width | 5mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 373A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SO-8SW | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.002Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 130nC | ||
Maximum Power Dissipation Pd 270W | ||
Maximum Operating Temperature 175°C | ||
Length 6mm | ||
Standards/Approvals RoHS Compliant | ||
Width 5mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- DE
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