製造零件編號

Vishay TrenchFET N channel-Channel MOSFET, 373 A, 60 V Enhancement, 8-Pin SO-8SW SQRS160EP-T1_GE3

RS庫存編號:: 735-238
製造零件編號:: SQRS160EP-T1_GE3
製造商:: Vishay

Vishay TrenchFET N channel-Channel MOSFET, 373 A, 60 V Enhancement, 8-Pin SO-8SW SQRS160EP-T1_GE3

可享批量折扣

小計（1 件）*

TWD126.00

(不含稅)

TWD132.30

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年12月15日發貨

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單位	每單位
1 - 9	TWD126.00
10 - 24	TWD82.00
25 - 99	TWD43.00
100 - 499	TWD42.00
500 +	TWD41.00

* 參考價格

RS庫存編號:: 735-238
製造零件編號:: SQRS160EP-T1_GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Product Type	MOSFET
	Channel Type	N channel
	Maximum Continuous Drain Current Id	373A
	Maximum Drain Source Voltage Vds	60V
	Package Type	SO-8SW
	Series	TrenchFET
	Mount Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.002Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	270W
	Typical Gate Charge Qg @ Vgs	130nC
	Maximum Gate Source Voltage Vgs	±20 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS Compliant
	Width	5 mm
	Length	6mm
	Automotive Standard	AEC-Q101

	選取全部
	品牌 Vishay
	Product Type MOSFET
	Channel Type N channel
	Maximum Continuous Drain Current Id 373A
	Maximum Drain Source Voltage Vds 60V
	Package Type SO-8SW
	Series TrenchFET
	Mount Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.002Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 270W
	Typical Gate Charge Qg @ Vgs 130nC
	Maximum Gate Source Voltage Vgs ±20 V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS Compliant
	Width 5 mm
	Length 6mm
	Automotive Standard AEC-Q101

Datasheet - SQRS160EP-T1_GE3

COO (Country of Origin):: DE

Vishay TrenchFET N channel-Channel MOSFET, 373 A, 60 V Enhancement, 8-Pin SO-8SW SQRS160EP-T1_GE3

訂單超過 $1,300.00 免費送貨

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