Vishay Dual TrenchFET 2 Type P, Type N-Channel MOSFET, 4 A, 100 V Enhancement, 8-Pin PowerPAK 1212-8 Dual

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RS庫存編號:
228-2924
製造零件編號:
SiS590DN-T1-GE3
製造商:
Vishay
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品牌

Vishay

Channel Type

Type P, Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

100V

Package Type

PowerPAK 1212-8 Dual

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.251Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

23.1W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

4.5nC

Maximum Operating Temperature

150°C

Transistor Configuration

Dual

Standards/Approvals

RoHS

Number of Elements per Chip

2

Automotive Standard

No

The Vishay Combo N- & P-Channel -100 V MOSFET.

100 % Rg and UIS tested

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