ROHM Dual 2 Type P-Channel MOSFET, 3.5 A, 40 V Enhancement, 7-Pin DFN UT6JB5TCR
- RS庫存編號:
- 223-6395
- 製造零件編號:
- UT6JB5TCR
- 製造商:
- ROHM
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 25 件）*
TWD527.50
(不含稅)
TWD554.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年6月17日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 25 | TWD21.10 | TWD527.50 |
| 50 - 75 | TWD20.60 | TWD515.00 |
| 100 - 225 | TWD20.10 | TWD502.50 |
| 250 - 975 | TWD19.70 | TWD492.50 |
| 1000 + | TWD19.20 | TWD480.00 |
* 參考價格
- RS庫存編號:
- 223-6395
- 製造零件編號:
- UT6JB5TCR
- 製造商:
- ROHM
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.5A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 1.22Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 6.2nC | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Height | 0.65mm | |
| Width | 2 mm | |
| Length | 2mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.5A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 1.22Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 6.2nC | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Height 0.65mm | ||
Width 2 mm | ||
Length 2mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The ROHM power MOSFET has DFN2020-8D package type. It is mainly used for switching.
Low on - resistance
Small surface mount package
Pb-free plating, RoHS compliant
Halogen free
相關連結
- ROHM Dual 2 Type P-Channel MOSFET 60 V Enhancement, 7-Pin DFN UT6JC5TCR
- ROHM Dual 2 Type N 7 A 9-Pin DFN
- ROHM Dual 2 Type N 7 A 9-Pin DFN HS8MA2TCR1
- ROHM Dual 2 Type P-Channel MOSFET 60 V Enhancement, 8-Pin TSMT QH8JC5TCR
- Nexperia Dual Trench MOSFET 2 Type P-Channel Trench MOSFET -20 V Enhancement, 8-Pin DFN
- ROHM RF9 Type P-Channel MOSFET 40 V Enhancement, 7-Pin DFN RF9G120BJFRATCR
- ROHM RF9 Type P-Channel MOSFET 60 V Enhancement, 7-Pin DFN RF9L120BJFRATCR
- Nexperia Dual Trench MOSFET 2 Type P-Channel Trench MOSFET -20 V Enhancement, 8-Pin DFN PMDXB950UPELZ