ROHM Dual 2 Type N, Type P-Channel MOSFET, 7 A, 30 V Enhancement, 9-Pin DFN HS8MA2TCR1

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TWD570.00

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TWD598.50

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500 +TWD20.70TWD517.50

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包裝方式:
RS庫存編號:
223-6203
製造零件編號:
HS8MA2TCR1
製造商:
ROHM
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品牌

ROHM

Product Type

MOSFET

Channel Type

Type N, Type P

Maximum Continuous Drain Current Id

7A

Maximum Drain Source Voltage Vds

30V

Package Type

DFN

Mount Type

Surface

Pin Count

9

Maximum Drain Source Resistance Rds

0.08Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

7.8nC

Forward Voltage Vf

-1.2V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

4W

Minimum Operating Temperature

-55°C

Transistor Configuration

Dual

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

0.8mm

Width

3.3 mm

Length

3.3mm

Number of Elements per Chip

2

Automotive Standard

No

The ROHM small signal MOSFET has TSMT8 package type. It is mainly used for switching.

Low on - resistance

Small surface mount package

Pb-free plating, RoHS compliant

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