ROHM Dual 2 Type P-Channel MOSFET, 3.5 A, 60 V Enhancement, 8-Pin TSMT QH8JC5TCR
- RS庫存編號:
- 223-6206
- 製造零件編號:
- QH8JC5TCR
- 製造商:
- ROHM
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- RS庫存編號:
- 223-6206
- 製造零件編號:
- QH8JC5TCR
- 製造商:
- ROHM
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Transistor Configuration | Dual | |
| Number of Elements per Chip | 2 | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 3.5 A | |
| Maximum Drain Source Voltage (Vds) | 60 V | |
| Channel Mode | Enhancement | |
| Pin Count | 8 | |
| Package Type | TSMT | |
| Automotive Standard | No | |
| Forward Voltage (Vf) | -1.2 V | |
| Height | 850 μm | |
| Length | 3.3 mm | |
| Maximum Drain Source Resistance (Rds) | 0.91 Ω | |
| Maximum Gate Source Voltage (Vgs) | 20 V | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 1.5 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Surface | |
| Standards/Approvals | No | |
| Typical Gate Charge (Qg) @ Vgs | 17.3 nC | |
| Width | 2.8 mm | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Transistor Configuration Dual | ||
Number of Elements per Chip 2 | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 3.5 A | ||
Maximum Drain Source Voltage (Vds) 60 V | ||
Channel Mode Enhancement | ||
Pin Count 8 | ||
Package Type TSMT | ||
Automotive Standard No | ||
Forward Voltage (Vf) -1.2 V | ||
Height 850 μm | ||
Length 3.3 mm | ||
Maximum Drain Source Resistance (Rds) 0.91 Ω | ||
Maximum Gate Source Voltage (Vgs) 20 V | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 1.5 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Surface | ||
Standards/Approvals No | ||
Typical Gate Charge (Qg) @ Vgs 17.3 nC | ||
Width 2.8 mm | ||
The ROHM power MOSFET has TO-3PF package type. It is mainly used for switching.
Fast reverse recovery time (trr)
Low on-resistance
Fast switching speed
Drive circuits can be simple
Pb-free plating, RoHS compliant
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