Infineon IPA60R Type N-Channel MOSFET, 18 A, 650 V Enhancement, 3-Pin TO-220 IPB60R040CFD7ATMA1
- RS庫存編號:
- 222-4887
- 製造零件編號:
- IPB60R040CFD7ATMA1
- 製造商:
- Infineon
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可享批量折扣
小計（1 包，共 2 件）*
TWD488.00
(不含稅)
TWD512.40
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 782 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD244.00 | TWD488.00 |
| 10 - 98 | TWD238.00 | TWD476.00 |
| 100 - 248 | TWD232.00 | TWD464.00 |
| 250 - 498 | TWD226.50 | TWD453.00 |
| 500 + | TWD220.50 | TWD441.00 |
* 參考價格
- RS庫存編號:
- 222-4887
- 製造零件編號:
- IPB60R040CFD7ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | IPA60R | |
| Package Type | TO-220 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series IPA60R | ||
Package Type TO-220 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ CFD7 Superjunction MOSFET IPB60R040CFD7 in D2PAK package is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET family it comes with reduced gate charge, improved turn-off behaviour and up to 69% reduced reverse recovery charge compared to competitors
Best-in-class hard commutation ruggedness
Highest reliability for resonant topologies
Highest efficiency with outstanding ease-of-use/performance trade-off
Enabling increased power density solutions
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