Infineon IPA60R N-Channel MOSFET, 31 A, 1.2 kV Enhancement, 3-Pin TO-220 IPA60R099P7XKSA1
- RS庫存編號:
- 222-4875
- 製造零件編號:
- IPA60R099P7XKSA1
- 製造商:
- Infineon
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* 參考價格
- RS庫存編號:
- 222-4875
- 製造零件編號:
- IPA60R099P7XKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 31A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Series | IPA60R | |
| Package Type | TO-220 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 99mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 29W | |
| Forward Voltage Vf | 900mV | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 31A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Series IPA60R | ||
Package Type TO-220 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 99mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 29W | ||
Forward Voltage Vf 900mV | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon IPA60R Series MOSFET, 1200V Maximum Drain Source Voltage, 31A Maximum Continuous Drain Current - IPA60R099P7XKSA1
This MOSFET is a high-voltage switching transistor designed for N-channel enhancement-mode applications in power electronics. It operates across a wide temperature range and is supplied in a TO-220 package for surface mounting, offering a practical solution where high drain-source voltage handling and moderate continuous current are required.
Features and Benefits:
• 1200 V drain-source capability enables high-voltage switching
• 31 A continuous drain current supports substantial load currents
• 99 mΩ RDS(on) minimises conduction losses during operation
• 29 W power dissipation allows sustained thermal loading
• 30 V gate-source limit permits robust gate drive margins
• −55 °C to +150 °C operating range ensures wide temperature tolerance
• 31 A continuous drain current supports substantial load currents
• 99 mΩ RDS(on) minimises conduction losses during operation
• 29 W power dissipation allows sustained thermal loading
• 30 V gate-source limit permits robust gate drive margins
• −55 °C to +150 °C operating range ensures wide temperature tolerance
Applications
• Suitable for industrial high-voltage switch circuits
• Ideal for power converters handling elevated voltages
• Used for motor drive stages requiring N-channel switching
• Can be used for inverter output stage designs
• Suitable for laboratory evaluation of high-voltage transistors
• Ideal for power converters handling elevated voltages
• Used for motor drive stages requiring N-channel switching
• Can be used for inverter output stage designs
• Suitable for laboratory evaluation of high-voltage transistors
What package should I expect for mounting on a heatsink?
It is supplied in a TO-220 package suitable for mounting to heatsinks and surface attachment.
What gate voltage limits must I observe for reliable operation?
The maximum permissible gate-to-source voltage is 30 V, so drive voltages should remain within this value.
How does thermal stress affect continuous current capability?
The maximum continuous drain current is rated at 31 A and must be managed with appropriate cooling to remain within the 29 W power dissipation limit.
What environmental temperatures can it tolerate during operation?
The device can operate between −55 °C and +150 °C, accommodating a broad range of ambient and elevated conditions.
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