Infineon IPA60R Type N-Channel MOSFET, 20 A, 1200 V Enhancement, 3-Pin TO-220 IPA60R160P7XKSA1
- RS庫存編號:
- 222-4878
- 製造零件編號:
- IPA60R160P7XKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD474.00
(不含稅)
TWD497.70
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 270 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | TWD94.80 | TWD474.00 |
| 10 - 95 | TWD92.80 | TWD464.00 |
| 100 - 245 | TWD90.20 | TWD451.00 |
| 250 - 495 | TWD88.00 | TWD440.00 |
| 500 + | TWD81.80 | TWD409.00 |
* 參考價格
- RS庫存編號:
- 222-4878
- 製造零件編號:
- IPA60R160P7XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-220 | |
| Series | IPA60R | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 160mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-220 | ||
Series IPA60R | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 160mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.
ESD ruggedness of ≥ 2kV (HBM class 2)
Integrated gate resistor RG
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
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