Infineon IPA60R Type N-Channel MOSFET, 18 A, 650 V Enhancement, 3-Pin TO-220 IPAW60R180P7SXKSA1

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TWD296.00

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TWD310.80

(含稅)

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10 - 10TWD29.60TWD296.00
20 - 90TWD28.80TWD288.00
100 - 240TWD28.20TWD282.00
250 - 490TWD27.40TWD274.00
500 +TWD25.40TWD254.00

* 參考價格

包裝方式:
RS庫存編號:
222-4885
製造零件編號:
IPAW60R180P7SXKSA1
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

650V

Series

IPA60R

Package Type

TO-220

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

180mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

ESD ruggedness of ≥ 2kV (HBM class 2)

Integrated gate resistor R G

Rugged body diode

Wide portfolio in through hole and surface mount packages

Both standard grade and industrial grade parts are available

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