Infineon OptiMOS N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252 IPD50N06S4L08ATMA2
- RS庫存編號:
- 222-4666
- 製造零件編號:
- IPD50N06S4L08ATMA2
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 包，共 15 件）*
TWD643.50
(不含稅)
TWD675.60
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 11,610 件從 2026年10月20日 起裝運發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 15 - 15 | TWD42.90 | TWD643.50 |
| 30 - 75 | TWD42.00 | TWD630.00 |
| 90 - 225 | TWD40.70 | TWD610.50 |
| 240 - 465 | TWD39.80 | TWD597.00 |
| 480 + | TWD38.90 | TWD583.50 |
* 參考價格
- RS庫存編號:
- 222-4666
- 製造零件編號:
- IPD50N06S4L08ATMA2
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 71W | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Typical Gate Charge Qg @ Vgs | 49nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.5mm | |
| Height | 2.3mm | |
| Width | 6.22mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 71W | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 16V | ||
Typical Gate Charge Qg @ Vgs 49nC | ||
Maximum Operating Temperature 175°C | ||
Length 6.5mm | ||
Height 2.3mm | ||
Width 6.22mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS Series MOSFET, 60V Maximum Drain Source Voltage, 50A Maximum Continuous Drain Current - IPD50N06S4L08ATMA2
This MOSFET is a surface-mount N-channel enhancement device designed for high-current switching in demanding operating conditions. It is intended for applications that require robust conduction, moderate voltage handling and operation across a wide temperature range typical of automotive and industrial environments.
Features and Benefits:
• Low conduction resistance of 7.8mΩ for reduced conduction losses
• High continuous current capability of 50A for heavy-load switching
• 60V drain-source rating for mid-voltage system compatibility
• 71W maximum power dissipation for elevated thermal handling
• Typical gate charge 49nC enabling predictable switching behaviour
• Gate-source voltage tolerance up to 16V for flexible drive levels
• High continuous current capability of 50A for heavy-load switching
• 60V drain-source rating for mid-voltage system compatibility
• 71W maximum power dissipation for elevated thermal handling
• Typical gate charge 49nC enabling predictable switching behaviour
• Gate-source voltage tolerance up to 16V for flexible drive levels
Applications
• Suitable for automotive power distribution modules
• Ideal for DC-DC converters in transportation systems
• Used for motor drive stages requiring high current
• Can be used for battery management and power steering
• Used in high-power switching on surface-mounted assemblies
• Ideal for DC-DC converters in transportation systems
• Used for motor drive stages requiring high current
• Can be used for battery management and power steering
• Used in high-power switching on surface-mounted assemblies
What temperature range can it operate within?
It supports continuous operation from -55°C up to 175°C.
What package and mounting style does it use?
The component is supplied in a TO-252 package for surface mounting.
How many electrical connections does it provide?
It offers three pins for gate, drain and source connections.
What is the forward voltage characteristic under conduction?
The device has a forward voltage of 1.3V during conduction.
What automotive qualification level does it meet?
It conforms to the AEC-Q101 automotive grade specification.
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