Infineon OptiMOS N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252 IPD50N06S409ATMA2
- RS庫存編號:
- 223-8518
- 製造零件編號:
- IPD50N06S409ATMA2
- 製造商:
- Infineon
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- RS庫存編號:
- 223-8518
- 製造零件編號:
- IPD50N06S409ATMA2
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 71W | |
| Forward Voltage Vf | 950mV | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 71W | ||
Forward Voltage Vf 950mV | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon OptiMOS Series MOSFET, 60V Maximum Drain Source Voltage, 50A Maximum Continuous Drain Current - IPD50N06S409ATMA2
This MOSFET is a surface-mount N-channel enhancement device designed to control power in electronic systems requiring high current and moderate voltage handling. It operates across a wide temperature range suitable for demanding thermal environments and is intended for use where efficient switching and power management are required.
Features and Benefits:
• Low on-resistance reduces conduction losses during high-current operation
• High continuous drain capability supports sustained 50 A currents
• 60 V drain-source rating enables mid-voltage power stages
• 71 W power dissipation allows handling of elevated thermal loads
• 17 nC typical gate charge enables relatively fast switching transitions
• 20 V gate tolerance accommodates higher gate-drive voltages
• High continuous drain capability supports sustained 50 A currents
• 60 V drain-source rating enables mid-voltage power stages
• 71 W power dissipation allows handling of elevated thermal loads
• 17 nC typical gate charge enables relatively fast switching transitions
• 20 V gate tolerance accommodates higher gate-drive voltages
Applications
• Suitable for synchronous buck converter switching stages
• Ideal for motor-driver power stages in industrial controllers
• Used with battery-management systems requiring high current handling
• Can be used for DC-DC power conversion in telecoms equipment
• Appropriate for power distribution modules on surface-mounted assemblies
• Ideal for motor-driver power stages in industrial controllers
• Used with battery-management systems requiring high current handling
• Can be used for DC-DC power conversion in telecoms equipment
• Appropriate for power distribution modules on surface-mounted assemblies
What is the device’s allowable gate-drive range?
The gate may be driven up to 20 V between gate and source without exceeding its gate-voltage limit.
How does the thermal range affect deployment in harsh environments?
It remains operational from −55 °C to 175 °C so it can function in wide-temperature applications where thermal extremes occur.
What packaging and mount method does it use for assembly?
It is supplied in a TO-252 package designed for surface-mount placement on assemblies.
What conduction characteristic indicates efficiency during on-state?
A maximum drain-source resistance of 9 mΩ minimises voltage drop and conduction losses at high currents.
How does forward voltage impact low-voltage power stages?
A forward voltage of 0.95 V limits additional voltage drop across the device during conduction, aiding efficiency.
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