Infineon OptiMOS Type N-Channel MOSFET & Diode, 16 A, 300 V Enhancement, 8-Pin TDSON BSC13DN30NSFDATMA1

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TWD390.60

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  • 2026年7月06日 發貨
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5 - 1245TWD74.40TWD372.00
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2500 +TWD71.60TWD358.00

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包裝方式:
RS庫存編號:
220-7357
製造零件編號:
BSC13DN30NSFDATMA1
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

MOSFET & Diode

Maximum Continuous Drain Current Id

16A

Maximum Drain Source Voltage Vds

300V

Package Type

TDSON

Series

OptiMOS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

130mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

150W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

23nC

Maximum Operating Temperature

175°C

Height

1.2mm

Length

5.35mm

Width

6.1 mm

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS Fast Diode (FD) 200V, 250V and 300V is optimized for body diode hard commutation. These devices are the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control and DC-AC inverter.

Improved hard commutation ruggedness

Optimized hard switching behaviour

Industry’s lowest R ds(on), Q g and Q rr

RoHS compliant - halogen free

Highest system reliability

System cost reduction

Highest efficiency and power density

Easy-to-design products

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