Infineon OptiMOS 5 Type N-Channel MOSFET & Diode, 205 A, 40 V Enhancement, 8-Pin TDSON BSC014N04LSTATMA1
- RS庫存編號:
- 220-7350
- 製造零件編號:
- BSC014N04LSTATMA1
- 製造商:
- Infineon
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可享批量折扣
小計(1 包,共 5 件)*
TWD295.00
(不含稅)
TWD309.75
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 4,455 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 1245 | TWD59.00 | TWD295.00 |
| 1250 - 2495 | TWD57.20 | TWD286.00 |
| 2500 + | TWD53.80 | TWD269.00 |
* 參考價格
- RS庫存編號:
- 220-7350
- 製造零件編號:
- BSC014N04LSTATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 205A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TDSON | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 115W | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 61nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.2mm | |
| Width | 6.1 mm | |
| Length | 5.35mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 205A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TDSON | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 115W | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 61nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Height 1.2mm | ||
Width 6.1 mm | ||
Length 5.35mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 power MOSFET in SuperSO8 package offers the latest technology together with temperature improvements in the package. This new combination enables higher power density as well as improved robustness. Compared to lower rated devices, the 175°C TJ_MAX feature offers either more power at a higher operating junction temperature or longer lifetime at the same operating junction temperature. Furthermore, 20% improvement in the safe operating area (SOA) is achieved. This new package feature is the perfect fit for applications such as telecom, motor drives and server.
Low RDS(on)
Optimized for synchronous rectification
Enhanced 175°C capability in SuperSO8
Longer life time
Highest efficiency and power density
Highest system reliability
Thermal robustness
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