Infineon OptiMOS Type N-Channel MOSFET & Diode, 137 A, 60 V Enhancement, 8-Pin TDSON
- RS庫存編號:
- 220-7351
- 製造零件編號:
- BSC028N06NSTATMA1
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 卷,共 5000 件)*
TWD186,500.00
(不含稅)
TWD195,800.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年6月01日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 5000 - 20000 | TWD37.30 | TWD186,500.00 |
| 25000 + | TWD36.20 | TWD181,000.00 |
* 參考價格
- RS庫存編號:
- 220-7351
- 製造零件編號:
- BSC028N06NSTATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 137A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TDSON | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.8mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 37nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 83W | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.1 mm | |
| Height | 1.2mm | |
| Length | 5.35mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 137A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TDSON | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.8mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 37nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 83W | ||
Maximum Operating Temperature 150°C | ||
Width 6.1 mm | ||
Height 1.2mm | ||
Length 5.35mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 power MOSFET in SuperSO8 package offers the latest technology together with temperature improvements in the package. This new combination enables higher power density as well as improved robustness. Compared to lower rated devices, the 175°C TJ_MAX feature offers either more power at a higher operating junction temperature or longer lifetime at the same operating junction temperature. Furthermore, 20% improvement in the safe operating area (SOA) is achieved. This new package feature is the perfect fit for applications such as telecom, motor drives and server.
Low RDS(on)
Optimized for synchronous rectification
Enhanced 175°C capability in SuperSO8
Longer life time
Highest efficiency and power density
Highest system reliability
Thermal robustness
相關連結
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