STMicroelectronics SCTH70N 1 MOSFET, 90 A, 1.2 kV, 7-Pin H2PAK-7 SCTH70N120G2V-7
- RS庫存編號:
- 219-4223
- 製造零件編號:
- SCTH70N120G2V-7
- 製造商:
- STMicroelectronics
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- RS庫存編號:
- 219-4223
- 製造零件編號:
- SCTH70N120G2V-7
- 製造商:
- STMicroelectronics
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Series | SCTH70N | |
| Number of Elements per Chip | 1 | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 90 A | |
| Maximum Drain Source Voltage (Vds) | 1.2 kV | |
| Pin Count | 7 | |
| Package Type | H2PAK-7 | |
| Maximum Drain Source Resistance (Rds) | 0.21 Ω | |
| Mount Type | Surface | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Series SCTH70N | ||
Number of Elements per Chip 1 | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 90 A | ||
Maximum Drain Source Voltage (Vds) 1.2 kV | ||
Pin Count 7 | ||
Package Type H2PAK-7 | ||
Maximum Drain Source Resistance (Rds) 0.21 Ω | ||
Mount Type Surface | ||
The STMicroelectronics silicon carbide power MOSFET device has been developed using ST’s Advanced and innovative 2nd generation Sic MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very high operating junction temperature capability (TJ = 175 °C)
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitances
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