STMicroelectronics SCT MOSFET, 55 A, 1200 V H2PAK-7

此圖片僅供參考,請參閲產品詳細資訊及規格

可享批量折扣

小計(1 件)*

TWD1,072.00

(不含稅)

TWD1,125.60

(含稅)

Add to Basket
選擇或輸入數量
暫時缺貨
  • 2026年9月01日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位
每單位
1 - 9TWD1,072.00
10 - 99TWD965.00
100 +TWD890.00

* 參考價格

RS庫存編號:
365-166
製造零件編號:
SCT025H120G3-7
製造商:
STMicroelectronics
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

STMicroelectronics

Product Type

MOSFET

Maximum Continuous Drain Current Id

55A

Maximum Drain Source Voltage Vds

1200V

Series

SCT

Package Type

H2PAK-7

Mount Type

Surface

Maximum Drain Source Resistance Rds

27mΩ

Maximum Power Dissipation Pd

375W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

25 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

AEC-Q101 qualified

Very low RDS(on) over the entire temperature range

High speed switching performances

Very fast and robust intrinsic body diode

Source sensing pin for increased efficiency

相關連結