STMicroelectronics SCT025H120G3AG Type N, Type N-Channel MOSFET, 55 A, 1200 V Enhancement, 7-Pin H2PAK-7 SCT025H120G3AG
- RS庫存編號:
- 214-951
- 製造零件編號:
- SCT025H120G3AG
- 製造商:
- STMicroelectronics
小計（1 卷，共 1000 件）*
TWD884,100.00
(不含稅)
TWD928,300.00
(含稅)
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單位 | 每單位 | 每卷* |
|---|---|---|
| 1000 + | TWD884.10 | TWD884,100.00 |
* 參考價格
- RS庫存編號:
- 214-951
- 製造零件編號:
- SCT025H120G3AG
- 製造商:
- STMicroelectronics
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | Type N, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | H2PAK-7 | |
| Series | SCT025H120G3AG | |
| Mount Type | Surface, Surface Mount | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 27mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 73nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 2.7V | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.25mm | |
| Height | 4.8mm | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Width | 10.4 mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type Type N, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type H2PAK-7 | ||
Series SCT025H120G3AG | ||
Mount Type Surface, Surface Mount | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 27mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 73nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 2.7V | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Operating Temperature 175°C | ||
Length 15.25mm | ||
Height 4.8mm | ||
Standards/Approvals AEC-Q101, RoHS | ||
Width 10.4 mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
High speed switching performances
Very fast and robust intrinsic body diode