Infineon OptiMOS 5 N-Channel MOSFET, 260 A, 100 V Enhancement, 8-Pin HSOF IAUT260N10S5N019ATMA1
- RS庫存編號:
- 218-2990
- 製造零件編號:
- IAUT260N10S5N019ATMA1
- 製造商:
- Infineon
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TWD381.00
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TWD400.04
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 498 | TWD190.50 | TWD381.00 |
| 500 - 998 | TWD185.50 | TWD371.00 |
| 1000 + | TWD174.00 | TWD348.00 |
* 參考價格
- RS庫存編號:
- 218-2990
- 製造零件編號:
- IAUT260N10S5N019ATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 260A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | HSOF | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.9mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 300W | |
| Maximum Operating Temperature | +175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 260A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type HSOF | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.9mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 300W | ||
Maximum Operating Temperature +175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS 5 Series MOSFET, 100V Drain Source Voltage, 260A Continuous Drain Current - IAUT260N10S5N019ATMA1
This MOSFET is a high-current N-channel enhancement device designed for surface-mounted power switching in demanding environments. It operates across a wide temperature range suited to harsh conditions and is built for applications requiring substantial drain current handling, tight on-resistance, and robust gate-voltage tolerance.
Features and Benefits:
• 1.9mΩ Rds(on) delivers reduced conduction losses
• 260A continuous drain current enables high-current handling
• 100V drain-source rating supports mid-voltage systems
• ±20V gate tolerance allows flexible drive voltages
• 300W power dissipation permits substantial thermal loading
• 1.3V forward voltage minimises diode conduction losses
• 260A continuous drain current enables high-current handling
• 100V drain-source rating supports mid-voltage systems
• ±20V gate tolerance allows flexible drive voltages
• 300W power dissipation permits substantial thermal loading
• 1.3V forward voltage minimises diode conduction losses
Applications
• Suitable for automotive powertrain and motor drives
• Ideal for high-current DC-DC conversion stages
• Used with battery management and energy storage systems
• Can be used for power distribution in electrified vehicles
• Suitable for surface-mount assemblies requiring Compact power MOSFETs
• Ideal for high-current DC-DC conversion stages
• Used with battery management and energy storage systems
• Can be used for power distribution in electrified vehicles
• Suitable for surface-mount assemblies requiring Compact power MOSFETs
What temperature extremes can it withstand in operation?
It is specified for continuous use from -55°C to +175°C.
What package and mounting style are provided for Compact assemblies?
It is supplied in an HSOF package intended for surface mounting with eight pins.
How does the device support automotive qualification needs?
It meets automotive AEC-Q101 requirements for components used in vehicle environments.
What channel type and mode determine switching behaviour?
It uses an N-channel device operating in enhancement mode for controlled conduction.
What electrical limits should be observed for gate and drain voltages?
Gate-source voltage must remain within ±20V and drain-source voltage within 100V.
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