Infineon CoolMOS C3 Type N-Channel MOSFET, 4 A, 800 V, 3-Pin TO-252 SPD04N80C3ATMA1
- RS庫存編號:
- 217-2644
- 製造零件編號:
- SPD04N80C3ATMA1
- 製造商:
- Infineon
可享批量折扣
小計（1 包，共 10 件）*
TWD230.00
(不含稅)
TWD241.50
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 890 件從 2026年3月23日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 620 | TWD23.00 | TWD230.00 |
| 630 - 1240 | TWD22.40 | TWD224.00 |
| 1250 + | TWD21.70 | TWD217.00 |
* 參考價格
- RS庫存編號:
- 217-2644
- 製造零件編號:
- SPD04N80C3ATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | CoolMOS C3 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.3Ω | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 63W | |
| Maximum Operating Temperature | 175°C | |
| Width | 2.41 mm | |
| Height | 6.22mm | |
| Length | 6.73mm | |
| Standards/Approvals | JEDEC, RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series CoolMOS C3 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.3Ω | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 63W | ||
Maximum Operating Temperature 175°C | ||
Width 2.41 mm | ||
Height 6.22mm | ||
Length 6.73mm | ||
Standards/Approvals JEDEC, RoHS | ||
Automotive Standard No | ||
The Infineon 800V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the "working horse" of the portfolio. .
Low specific on-state resistance (RDS(on)*A)
Very low energy storage in output capacitance (Eoss) @400V
Low gate charge (Qg)
Field proven CoolMOS™ quality
CoolMOS™ technology has been manufactured by Infineon since 1998
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