製造零件編號

Infineon CoolMOS Type N-Channel MOSFET, 2 A, 800 V Enhancement, 3-Pin TO-252

RS庫存編號:: 214-4478
製造零件編號:: SPD02N80C3ATMA1
製造商:: Infineon

Infineon CoolMOS Type N-Channel MOSFET, 2 A, 800 V Enhancement, 3-Pin TO-252

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 2500 件）*

TWD39,500.00

(不含稅)

TWD41,475.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2027年1月27日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
2500 - 10000	TWD15.80	TWD39,500.00
12500 +	TWD15.30	TWD38,250.00

* 參考價格

RS庫存編號:: 214-4478
製造零件編號:: SPD02N80C3ATMA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	2A
	Maximum Drain Source Voltage Vds	800V
	Package Type	TO-252
	Series	CoolMOS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	2.7Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	42W
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	16nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	JEDEC1
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 2A
	Maximum Drain Source Voltage Vds 800V
	Package Type TO-252
	Series CoolMOS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 2.7Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 42W
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 16nC
	Maximum Operating Temperature 150°C
	Standards/Approvals JEDEC1
	Automotive Standard No

Datasheet - SPD02N80C3ATMA1

This Infineon Cool MOS MOSFET uses new revolutionary high voltage technology and has high peak current capability.

It has ultra low gate charge

Infineon CoolMOS Type N-Channel MOSFET, 2 A, 800 V Enhancement, 3-Pin TO-252

訂單超過 $1,300.00 免費送貨

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