Infineon CoolMOS Type N-Channel MOSFET, 2 A, 800 V Enhancement, 3-Pin TO-252 SPD02N80C3ATMA1
- RS庫存編號:
- 214-4479
- Distrelec 貨號:
- 304-39-428
- 製造零件編號:
- SPD02N80C3ATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 15 件）*
TWD334.50
(不含稅)
TWD351.30
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 2,355 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 15 - 615 | TWD22.30 | TWD334.50 |
| 630 - 1230 | TWD21.70 | TWD325.50 |
| 1245 + | TWD21.30 | TWD319.50 |
* 參考價格
- RS庫存編號:
- 214-4479
- Distrelec 貨號:
- 304-39-428
- 製造零件編號:
- SPD02N80C3ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-252 | |
| Series | CoolMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.7Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 42W | |
| Typical Gate Charge Qg @ Vgs | 16nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC1 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-252 | ||
Series CoolMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.7Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 42W | ||
Typical Gate Charge Qg @ Vgs 16nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC1 | ||
Automotive Standard No | ||
This Infineon Cool MOS MOSFET uses new revolutionary high voltage technology and has high peak current capability.
It has ultra low gate charge
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