Infineon CoolMOS P7 Type N-Channel MOSFET, 4 A, 800 V Enhancement, 3-Pin TO-252 IPD80R1K4P7ATMA1

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包裝方式:
RS庫存編號:
130-0906
製造零件編號:
IPD80R1K4P7ATMA1
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-252

Series

CoolMOS P7

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.4Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

32W

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

10nC

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

2.41mm

Width

6.22 mm

Length

6.73mm

Automotive Standard

No

Infineon CoolMOS™P7 Power MOSFET


The 800V CoolMOS P7 Power MOSFET family establishes even higher efficiency and thermal performance. Suitable applications are power adapters, LED lighting, audio, industrial and auxiliary power.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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