Infineon CoolMOS Type N-Channel MOSFET, 8.5 A, 700 V N, 3-Pin TO-220 IPAN70R600P7SXKSA1

RS庫存編號:: 217-2502
製造零件編號:: IPAN70R600P7SXKSA1
製造商:: Infineon

Infineon CoolMOS Type N-Channel MOSFET, 8.5 A, 700 V N, 3-Pin TO-220 IPAN70R600P7SXKSA1

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TWD266.00

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TWD279.20

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單位	每單位	每包*
20 - 80	TWD13.30	TWD266.00
100 +	TWD13.10	TWD262.00

* 參考價格

RS庫存編號:: 217-2502
製造零件編號:: IPAN70R600P7SXKSA1
製造商:: Infineon

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	8.5A
	Maximum Drain Source Voltage Vds	700V
	Series	CoolMOS
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	600mΩ
	Channel Mode	N
	Maximum Power Dissipation Pd	82W
	Typical Gate Charge Qg @ Vgs	20.5nC
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-40°C
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	16.1mm
	Height	29.87mm
	Width	4.8 mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 8.5A
	Maximum Drain Source Voltage Vds 700V
	Series CoolMOS
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 600mΩ
	Channel Mode N
	Maximum Power Dissipation Pd 82W
	Typical Gate Charge Qg @ Vgs 20.5nC
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -40°C
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 16.1mm
	Height 29.87mm
	Width 4.8 mm
	Automotive Standard No

Datasheet - IPAN70R600P7SXKSA1

The Infineon 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS™ P7 enables best fit for target applications in terms of: Efficiency and thermals Ease-of-use EMI behaviour.

Extremely low FOM R DS(on) x E oss; lower Q g, E on and E off

Highly performant technology

Low switching losses (E oss)

Highly efficient

Excellent thermal behaviour

Allowing high speed switching

Integrated protection Zener diode

Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V

Finely graduated portfolio

Infineon CoolMOS Type N-Channel MOSFET, 8.5 A, 700 V N, 3-Pin TO-220 IPAN70R600P7SXKSA1

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