Infineon CoolMOS N-Channel MOSFET, 9.9 A, 600 V P, 3-Pin TO-220 IPAN60R650CEXKSA1
- RS庫存編號:
- 217-2496
- 製造零件編號:
- IPAN60R650CEXKSA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 管，共 50 件）*
TWD1,925.00
(不含稅)
TWD2,021.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 900 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD38.50 | TWD1,925.00 |
| 100 - 150 | TWD37.30 | TWD1,865.00 |
| 200 + | TWD34.40 | TWD1,720.00 |
* 參考價格
- RS庫存編號:
- 217-2496
- 製造零件編號:
- IPAN60R650CEXKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 9.9A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | CoolMOS | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 650mΩ | |
| Channel Mode | P | |
| Typical Gate Charge Qg @ Vgs | 20.5nC | |
| Forward Voltage Vf | 900mV | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 82W | |
| Maximum Operating Temperature | 150°C | |
| Height | 29.87mm | |
| Width | 4.8mm | |
| Standards/Approvals | No | |
| Length | 16.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 9.9A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series CoolMOS | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 650mΩ | ||
Channel Mode P | ||
Typical Gate Charge Qg @ Vgs 20.5nC | ||
Forward Voltage Vf 900mV | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 82W | ||
Maximum Operating Temperature 150°C | ||
Height 29.87mm | ||
Width 4.8mm | ||
Standards/Approvals No | ||
Length 16.1mm | ||
Automotive Standard No | ||
The Infineon CoolMOS™ CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS™ CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets.
Narrow margins between typical and max R DS(on)Reduced energy stored in output capacitance (E oss)
Good body diode ruggedness and reduced reverse recovery charge (Q rr)
Optimized integrated R g
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