Infineon CoolMOS CE Type N-Channel MOSFET, 3.9 A, 800 V P, 3-Pin TO-220 IPA80R1K4CEXKSA2
- RS庫存編號:
- 214-4355
- 製造零件編號:
- IPA80R1K4CEXKSA2
- 製造商:
- Infineon
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- RS庫存編號:
- 214-4355
- 製造零件編號:
- IPA80R1K4CEXKSA2
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3.9A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | CoolMOS CE | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Channel Mode | P | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 31W | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Width | 16.15 mm | |
| Length | 10.68mm | |
| Standards/Approvals | No | |
| Height | 4.85mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3.9A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series CoolMOS CE | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Channel Mode P | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 31W | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Width 16.15 mm | ||
Length 10.68mm | ||
Standards/Approvals No | ||
Height 4.85mm | ||
Automotive Standard No | ||
This Infineon CoolMOSE CE MOSFET uses revolutionary technology for high voltage power MOSFETs. The high voltage capability combines safety with performance and ruggedness to allow stable designs at highest efficiency level.
It is RoHS compliant
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