Infineon CoolMOS CE Type N-Channel MOSFET, 3.9 A, 800 V Enhancement, 3-Pin TO-252 IPD80R1K4CEATMA1

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TWD463.50

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TWD486.60

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包裝方式:
RS庫存編號:
214-4396
製造零件編號:
IPD80R1K4CEATMA1
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

3.9A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-252

Series

CoolMOS CE

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.4Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

63W

Typical Gate Charge Qg @ Vgs

23nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Length

6.65mm

Height

2.35mm

Standards/Approvals

No

Width

6.42 mm

Automotive Standard

No

This Infineon 800V Cool MOS CE MOSFET has high voltage capability that combines safety with performance and ruggedness to allow stable designs at highest efficiency level.

It is RoHS compliant

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