Infineon CoolMOS CE Type N-Channel MOSFET, 3.9 A, 800 V P, 3-Pin TO-220
- RS庫存編號:
- 214-4353
- 製造零件編號:
- IPA80R1K4CEXKSA2
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 50 件）*
TWD1,265.00
(不含稅)
TWD1,328.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年5月12日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD25.30 | TWD1,265.00 |
| 100 - 150 | TWD24.50 | TWD1,225.00 |
| 200 + | TWD23.80 | TWD1,190.00 |
* 參考價格
- RS庫存編號:
- 214-4353
- 製造零件編號:
- IPA80R1K4CEXKSA2
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.9A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-220 | |
| Series | CoolMOS CE | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Channel Mode | P | |
| Maximum Power Dissipation Pd | 31W | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Width | 16.15 mm | |
| Length | 10.68mm | |
| Standards/Approvals | No | |
| Height | 4.85mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.9A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-220 | ||
Series CoolMOS CE | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Channel Mode P | ||
Maximum Power Dissipation Pd 31W | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Width 16.15 mm | ||
Length 10.68mm | ||
Standards/Approvals No | ||
Height 4.85mm | ||
Automotive Standard No | ||
This Infineon CoolMOSE CE MOSFET uses revolutionary technology for high voltage power MOSFETs. The high voltage capability combines safety with performance and ruggedness to allow stable designs at highest efficiency level.
It is RoHS compliant
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