Infineon OptiMOS Type N-Channel MOSFET, 47 A, 60 V Enhancement, 8-Pin SuperSO BSC094N06LS5ATMA1
- RS庫存編號:
- 215-2465
- 製造零件編號:
- BSC094N06LS5ATMA1
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計(1 包,共 20 件)*
TWD716.00
(不含稅)
TWD751.80
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 11,420 件從 2026年8月10日 起發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 1240 | TWD35.80 | TWD716.00 |
| 1260 - 2480 | TWD34.90 | TWD698.00 |
| 2500 + | TWD32.60 | TWD652.00 |
* 參考價格
- RS庫存編號:
- 215-2465
- 製造零件編號:
- BSC094N06LS5ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 47A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SuperSO | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 13.4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 9.4nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 36W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 47A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SuperSO | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 13.4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 9.4nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 36W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon OptiMOS Series MOSFET, 60V Maximum Drain Source Voltage, 47A Maximum Continuous Drain Current - BSC094N06LS5ATMA1
This MOSFET is an N-channel enhancement-mode transistor intended for high-current switching in surface-mounted assemblies. It operates across a wide temperature range for demanding environments and suits power-conversion roles where a moderate drain-source voltage rating and low conduction losses are required.
Features and Benefits:
• 60V drain rating enables mid-voltage power switching
• 47A continuous current supports high-load applications
• 13.4mΩ Rds(on) reduces conduction power loss
• 36W maximum dissipation permits substantial power handling
• 9.4nC typical gate charge optimises switching energy
• 20V gate tolerance allows flexible drive voltages
• 47A continuous current supports high-load applications
• 13.4mΩ Rds(on) reduces conduction power loss
• 36W maximum dissipation permits substantial power handling
• 9.4nC typical gate charge optimises switching energy
• 20V gate tolerance allows flexible drive voltages
Applications
• Suitable for synchronous buck regulator stages
• Ideal for motor-driver half-bridge assemblies
• Used in server power-management front ends
• Can be used for battery protection and distribution
• Suitable for high-current DC-DC converters
• Ideal for motor-driver half-bridge assemblies
• Used in server power-management front ends
• Can be used for battery protection and distribution
• Suitable for high-current DC-DC converters
What temperature extremes can it withstand during operation?
It functions over a wide thermal range from -55°C up to 150°C, allowing use in both cold-start and elevated-temperature environments.
How is it physically packaged for assembly?
The device is supplied in a SuperSO surface-mount package with eight pins for PCB mounting and automated assembly.
What switching behaviour can designers expect during gate drive?
With a typical gate charge of 9.4nC, it offers a balance between switching speed and drive energy, enabling efficient transitions when driven from common gate drivers.
Is the device optimised for low-voltage drop in conduction?
Yes
the low drain-source resistance of 13.4mΩ minimises voltage drop under load, reducing heat generation during continuous operation.
相關連結
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 8-Pin SuperSO
- Infineon OptiMOS Type N-Channel MOSFET 80 V Enhancement, 8-Pin SuperSO
- Infineon OptiMOS Type N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO
- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 8-Pin SuperSO
- Infineon OptiMOS Type N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO
- Infineon OptiMOS Type N-Channel MOSFET 80 V Enhancement, 8-Pin SuperSO BSC052N08NS5ATMA1
- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 8-Pin SuperSO BSC034N03LSGATMA1
- Infineon OptiMOS Type N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO BSC054N04NSGATMA1
