Infineon OptiMOS Type N-Channel MOSFET, 47 A, 60 V Enhancement, 8-Pin SuperSO BSC094N06LS5ATMA1

此圖片僅供參考,請參閲產品詳細資訊及規格

可享批量折扣
查看批量定價選項

小計(1 包,共 20 件)*

TWD716.00

(不含稅)

TWD751.80

(含稅)

Add to Basket
選擇或輸入數量
有庫存
  • 加上 11,420 件從 2026年8月10日 起發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位
每單位
每包*
20 - 1240TWD35.80TWD716.00
1260 - 2480TWD34.90TWD698.00
2500 +TWD32.60TWD652.00

* 參考價格

包裝方式:
RS庫存編號:
215-2465
製造零件編號:
BSC094N06LS5ATMA1
製造商:
Infineon
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

47A

Maximum Drain Source Voltage Vds

60V

Package Type

SuperSO

Series

OptiMOS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

13.4mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

9.4nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

36W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

Infineon OptiMOS Series MOSFET, 60V Maximum Drain Source Voltage, 47A Maximum Continuous Drain Current - BSC094N06LS5ATMA1


This MOSFET is an N-channel enhancement-mode transistor intended for high-current switching in surface-mounted assemblies. It operates across a wide temperature range for demanding environments and suits power-conversion roles where a moderate drain-source voltage rating and low conduction losses are required.

Features and Benefits:


• 60V drain rating enables mid-voltage power switching
• 47A continuous current supports high-load applications
• 13.4mΩ Rds(on) reduces conduction power loss
• 36W maximum dissipation permits substantial power handling
• 9.4nC typical gate charge optimises switching energy
• 20V gate tolerance allows flexible drive voltages

Applications


• Suitable for synchronous buck regulator stages
• Ideal for motor-driver half-bridge assemblies
• Used in server power-management front ends
• Can be used for battery protection and distribution
• Suitable for high-current DC-DC converters

What temperature extremes can it withstand during operation?


It functions over a wide thermal range from -55°C up to 150°C, allowing use in both cold-start and elevated-temperature environments.

How is it physically packaged for assembly?


The device is supplied in a SuperSO surface-mount package with eight pins for PCB mounting and automated assembly.

What switching behaviour can designers expect during gate drive?


With a typical gate charge of 9.4nC, it offers a balance between switching speed and drive energy, enabling efficient transitions when driven from common gate drivers.

Is the device optimised for low-voltage drop in conduction?


Yes

the low drain-source resistance of 13.4mΩ minimises voltage drop under load, reducing heat generation during continuous operation.

相關連結

第一時間了解我們的最新產品和優惠

電郵

您在訂閱此郵件時提供的個人信息將根據《隱私政策》進行處理。