Infineon OptiMOS Type N-Channel MOSFET, 95 A, 80 V Enhancement, 8-Pin SuperSO
- RS庫存編號:
- 215-2460
- 製造零件編號:
- BSC052N08NS5ATMA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 卷，共 5000 件）*
TWD161,000.00
(不含稅)
TWD169,050.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年10月19日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 5000 - 20000 | TWD32.20 | TWD161,000.00 |
| 25000 + | TWD30.60 | TWD153,000.00 |
* 參考價格
- RS庫存編號:
- 215-2460
- 製造零件編號:
- BSC052N08NS5ATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 95A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | OptiMOS | |
| Package Type | SuperSO | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.2mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 83W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 95A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series OptiMOS | ||
Package Type SuperSO | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.2mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 83W | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon OptiMOS Series MOSFET, 80V Maximum Drain Source Voltage, 95A Maximum Continuous Drain Current - BSC052N08NS5ATMA1
This MOSFET is a surface-mount N-channel enhancement-mode transistor designed for high-current switching in power electronics. It is intended for applications requiring efficient conduction and fast switching across a wide ambient range, and is supplied in an 8-pin SuperSO package suitable for compact board layouts.
Features and Benefits:
• Very low on-resistance 5.2mΩ enabling reduced conduction losses
• High continuous drain current 95A permitting elevated load handling
• 80V drain-source rating supporting medium-voltage designs
• 83W maximum power dissipation allowing sustained thermal load
• Typical gate charge 32nC for faster switching transitions
• Gate-source tolerance 20V to accommodate robust drive voltages
• High continuous drain current 95A permitting elevated load handling
• 80V drain-source rating supporting medium-voltage designs
• 83W maximum power dissipation allowing sustained thermal load
• Typical gate charge 32nC for faster switching transitions
• Gate-source tolerance 20V to accommodate robust drive voltages
Applications
• Suitable for high-efficiency DC-DC converters in power rails
• Ideal for synchronous rectification in power-supply stages
• Used for motor-drive half-bridge and inverter switching
• Can be used for server and telecoms power-distribution modules
• Employed in industrial switching where a wide temperature range is required
• Ideal for synchronous rectification in power-supply stages
• Used for motor-drive half-bridge and inverter switching
• Can be used for server and telecoms power-distribution modules
• Employed in industrial switching where a wide temperature range is required
What temperature extremes can the device tolerate during operation?
It is specified to operate from -55°C up to 150°C, allowing use in demanding thermal environments.
Which mounting method and package should I allow for on the board?
The device is supplied as a surface-mounted 8-pin SuperSO package, so the layout should accommodate the thermal pad and SMD land pattern.
How does the transistor behave when driven with stronger gate voltages?
The gate-source maximum is 20V
within that limit higher drive voltages reduce RDS(on) and improve conduction performance.
What switching characteristic impacts layout for high-frequency designs?
A typical gate charge of 32nC determines gate-drive energy and influences drive circuitry and EMI mitigation strategies.
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