Infineon OptiMOS Type N-Channel MOSFET, 98 A, 40 V Enhancement, 8-Pin SuperSO BSC032N04LSATMA1
- RS庫存編號:
- 215-2457
- 製造零件編號:
- BSC032N04LSATMA1
- 製造商:
- Infineon
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|---|---|---|
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| 1260 - 2480 | TWD31.30 | TWD626.00 |
| 2500 + | TWD30.80 | TWD616.00 |
* 參考價格
- RS庫存編號:
- 215-2457
- 製造零件編號:
- BSC032N04LSATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 98A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SuperSO | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Power Dissipation Pd | 52W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 98A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SuperSO | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Power Dissipation Pd 52W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon OptiMOS Series MOSFET, 40V Maximum Drain Source Voltage, 98A Maximum Continuous Drain Current - BSC032N04LSATMA1
This MOSFET is a high-current N-channel transistor designed for surface-mounted power switching and conversion in demanding electronic systems. It operates across a wide ambient range and suits applications requiring low conduction losses and significant continuous current handling within a compact SuperSO package.
Features and Benefits:
• Very low on-resistance of 4.4 mΩ for reduced conduction losses
• 98A continuous drain capability for heavy-current loads
• 40V drain-to-source rating for mid-voltage power stages
• 52W maximum power dissipation for thermal headroom
• Typical gate charge 25 nC enabling efficient gate drive
• Operates from -55 °C to 175 °C for extended temperature tolerance
• 98A continuous drain capability for heavy-current loads
• 40V drain-to-source rating for mid-voltage power stages
• 52W maximum power dissipation for thermal headroom
• Typical gate charge 25 nC enabling efficient gate drive
• Operates from -55 °C to 175 °C for extended temperature tolerance
Applications
• Suitable for high-current DC-DC converters in power supplies
• Ideal for synchronous rectification in power management
• Used for motor-drive stages requiring surface-mount parts
• Can be used for telecom and server power distribution
• Suited to battery-powered systems needing low Vf switching
• Ideal for synchronous rectification in power management
• Used for motor-drive stages requiring surface-mount parts
• Can be used for telecom and server power distribution
• Suited to battery-powered systems needing low Vf switching
What gate-drive considerations are required for efficient switching?
Drive circuitry should deliver sufficient peak current to charge the 25 nC gate rapidly while controlling switching slew to balance switching loss and EMI.
How should thermal management be approached on the PCB?
Use multi-layer copper planes and thermal vias beneath the SuperSO footprint to spread 52W dissipation and lower junction-to-board thermal resistance.
What electrical stresses must the device withstand during transient events?
The device is rated to 40V Vds steady-state
transient protection such as snubbers or transient voltage suppression should be applied to limit voltage overshoot beyond this level.
Are there specific layout practices for minimising conduction loss?
Place wide, short copper traces for drain and source connections and minimise loop inductance between the device and its gate drive to preserve the low 4.4 mΩ advantage.
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