Infineon OptiMOS Type N-Channel MOSFET, 50 A, 80 V Enhancement, 7-Pin MG-WDSON BSB104N08NP3GXUSA1
- RS庫存編號:
- 214-8967
- 製造零件編號:
- BSB104N08NP3GXUSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 15 件）*
TWD637.50
(不含稅)
TWD669.30
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 4,995 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 15 - 1245 | TWD42.50 | TWD637.50 |
| 1260 - 2490 | TWD41.40 | TWD621.00 |
| 2505 + | TWD40.80 | TWD612.00 |
* 參考價格
- RS庫存編號:
- 214-8967
- 製造零件編號:
- BSB104N08NP3GXUSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | MG-WDSON | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 10.4mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Power Dissipation Pd | 42W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.7mm | |
| Width | 6.35 mm | |
| Length | 5.05mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type MG-WDSON | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 10.4mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Power Dissipation Pd 42W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Height 0.7mm | ||
Width 6.35 mm | ||
Length 5.05mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon range of OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These consists of range of energy efficient MOSFET transistors, in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces.
Low parasitic inductance
Optimized technology for DC/DC converters
Dual sided cooling
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