Infineon OptiMOS 3 Type N-Channel MOSFET, 90 A, 60 V Enhancement, 7-Pin WDSON BSB028N06NN3GXUMA1
- RS庫存編號:
- 906-4306
- 製造零件編號:
- BSB028N06NN3GXUMA1
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
小計(1 包,共 5 件)*
TWD473.00
(不含稅)
TWD496.65
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年5月28日 發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 + | TWD94.60 | TWD473.00 |
* 參考價格
- RS庫存編號:
- 906-4306
- 製造零件編號:
- BSB028N06NN3GXUMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS 3 | |
| Package Type | WDSON | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 2.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 78W | |
| Typical Gate Charge Qg @ Vgs | 108nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.53mm | |
| Length | 6.35mm | |
| Standards/Approvals | No | |
| Width | 5.05 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS 3 | ||
Package Type WDSON | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 2.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 78W | ||
Typical Gate Charge Qg @ Vgs 108nC | ||
Maximum Operating Temperature 150°C | ||
Height 0.53mm | ||
Length 6.35mm | ||
Standards/Approvals No | ||
Width 5.05 mm | ||
Automotive Standard No | ||
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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