Infineon HEXFET Type N-Channel MOSFET, 68 A, 80 V WDSON

RS庫存編號:: 258-3962
製造零件編號:: IRF6646TRPBF
製造商:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 68 A, 80 V WDSON

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 4800 件）*

TWD140,160.00

(不含稅)

TWD147,168.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年4月02日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
4800 - 4800	TWD29.20	TWD140,160.00
9600 +	TWD28.40	TWD136,320.00

* 參考價格

RS庫存編號:: 258-3962
製造零件編號:: IRF6646TRPBF
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	68A
	Maximum Drain Source Voltage Vds	80V
	Package Type	WDSON
	Series	HEXFET
	Mount Type	Surface
	Maximum Drain Source Resistance Rds	9.5mΩ
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	36nC
	Maximum Power Dissipation Pd	89W
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 68A
	Maximum Drain Source Voltage Vds 80V
	Package Type WDSON
	Series HEXFET
	Mount Type Surface
	Maximum Drain Source Resistance Rds 9.5mΩ
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 36nC
	Maximum Power Dissipation Pd 89W
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IRF6646TRPBF

The Infineon HEXFET Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes.

Application Specific MOSFETs

Ideal for High Performance Isolated Converter

Primary Switch Socket

Optimized for Synchronous Rectification

Low Conduction Losses

High Cdv/dt Immunity

Low Profile (<0.7mm)

Dual Sided Cooling Compatible

Compatible with existing Surface Mount Technique

Infineon HEXFET Type N-Channel MOSFET, 68 A, 80 V WDSON

訂單超過 $1,300.00 免費送貨

相關連結