Infineon HEXFET Type N-Channel MOSFET, 68 A, 80 V WDSON

RS庫存編號:: 258-3962
製造零件編號:: IRF6646TRPBF
製造商:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 68 A, 80 V WDSON

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 4800 件）*

TWD140,160.00

(不含稅)

TWD147,168.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年4月24日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
4800 - 4800	TWD29.20	TWD140,160.00
9600 +	TWD28.40	TWD136,320.00

* 參考價格

RS庫存編號:: 258-3962
製造零件編號:: IRF6646TRPBF
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	68A
	Maximum Drain Source Voltage Vds	80V
	Package Type	WDSON
	Series	HEXFET
	Mount Type	Surface
	Maximum Drain Source Resistance Rds	9.5mΩ
	Typical Gate Charge Qg @ Vgs	36nC
	Maximum Power Dissipation Pd	89W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-40°C
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 68A
	Maximum Drain Source Voltage Vds 80V
	Package Type WDSON
	Series HEXFET
	Mount Type Surface
	Maximum Drain Source Resistance Rds 9.5mΩ
	Typical Gate Charge Qg @ Vgs 36nC
	Maximum Power Dissipation Pd 89W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -40°C
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IRF6646TRPBF

The Infineon HEXFET Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes.

Application Specific MOSFETs

Ideal for High Performance Isolated Converter

Primary Switch Socket

Optimized for Synchronous Rectification

Low Conduction Losses

High Cdv/dt Immunity

Low Profile (<0.7mm)

Dual Sided Cooling Compatible

Compatible with existing Surface Mount Technique

Infineon HEXFET Type N-Channel MOSFET, 68 A, 80 V WDSON

訂單超過 $1,300.00 免費送貨

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