STMicroelectronics SCT1000N170 Type N-Channel MOSFET, 7 A, 1700 V Enhancement, 3-Pin Hip-247
- RS庫存編號:
- 212-2091
- 製造零件編號:
- SCT1000N170
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 30 件）*
TWD12,282.00
(不含稅)
TWD12,896.10
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年9月11日 發貨
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單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 120 | TWD409.40 | TWD12,282.00 |
| 150 + | TWD397.10 | TWD11,913.00 |
* 參考價格
- RS庫存編號:
- 212-2091
- 製造零件編號:
- SCT1000N170
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 1700V | |
| Package Type | Hip-247 | |
| Series | SCT1000N170 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.66Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 4.5V | |
| Typical Gate Charge Qg @ Vgs | 13.3nC | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 96W | |
| Maximum Operating Temperature | 200°C | |
| Length | 15.75mm | |
| Width | 20.15 mm | |
| Height | 5.15mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 1700V | ||
Package Type Hip-247 | ||
Series SCT1000N170 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.66Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 4.5V | ||
Typical Gate Charge Qg @ Vgs 13.3nC | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 96W | ||
Maximum Operating Temperature 200°C | ||
Length 15.75mm | ||
Width 20.15 mm | ||
Height 5.15mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
SiC MOSFET
The STMicroelectronics silicon carbide power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industry standard outline with significantly improved thermal capability.
High speed switching performance
Very fast and robust intrinsic body diode
Low capacitances
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