Vishay SiJ128LDP Type N-Channel MOSFET, 25.5 A, 80 V Enhancement, 4-Pin SO-8 SiJ128LDP-T1-GE3
- RS庫存編號:
- 204-7217
- 製造零件編號:
- SiJ128LDP-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 20 件）*
TWD510.00
(不含稅)
TWD535.60
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年4月22日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 740 | TWD25.50 | TWD510.00 |
| 760 - 1480 | TWD25.00 | TWD500.00 |
| 1500 + | TWD24.50 | TWD490.00 |
* 參考價格
- RS庫存編號:
- 204-7217
- 製造零件編號:
- SiJ128LDP-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 25.5A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | SiJ128LDP | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 15.6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 22.3W | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 5.25mm | |
| Height | 6.25mm | |
| Width | 1.14 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 25.5A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series SiJ128LDP | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 15.6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 22.3W | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 5.25mm | ||
Height 6.25mm | ||
Width 1.14 mm | ||
Automotive Standard No | ||
The Vishay N-Channel 80 V (D-S) MOSFET has a very low Qg and Qoss reduce power loss and improve efficiency. It has a very low Qg and Qoss reduce power loss and improve efficiency.
TrenchFET Gen IV power MOSFET
100 % Rg and UIS tested
相關連結
- Vishay SiJ128LDP Type N-Channel MOSFET 80 V Enhancement, 4-Pin SO-8
- Vishay SIRS Type N-Channel MOSFET 80 V Enhancement, 8-Pin SO-8 SIRS5800DP-T1-GE3
- Vishay SIJ Type P-Channel MOSFET 80 V Enhancement, 7-Pin SO-8L SIJ4819DP-T1-GE3
- Vishay Type N-Channel MOSFET 80 V PowerPAK SO-8L SIJ482DP-T1-GE3
- Vishay Type P-Channel MOSFET -30 V Enhancement, 8-Pin SO-8 SI4155DY-T1-GE3
- Vishay Type P-Channel MOSFET -30 V Enhancement, 8-Pin SO-8 SI4151DY-T1-GE3
- Vishay SIRS Type P-Channel MOSFET 40 V Enhancement, 8-Pin SO-8 SIRS4401DP-T1-GE3
- Vishay SI Type N-Channel MOSFET 150 V Enhancement, 8-Pin SO-8 SI4848BDY-T1-GE3