Vishay SiJ462ADP N-Channel MOSFET, 39.3 A, 60 V Enhancement, 4-Pin SO-8 SiJ462ADP-T1-GE3
- RS庫存編號:
- 204-7215
- 製造零件編號:
- SiJ462ADP-T1-GE3
- 製造商:
- Vishay
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可享批量折扣
查看批量定價選項小計（1 包，共 20 件）*
TWD996.00
(不含稅)
TWD1,045.80
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年12月01日 發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 740 | TWD49.80 | TWD996.00 |
| 760 - 1480 | TWD48.60 | TWD972.00 |
| 1500 + | TWD47.90 | TWD958.00 |
* 參考價格
- RS庫存編號:
- 204-7215
- 製造零件編號:
- SiJ462ADP-T1-GE3
- 製造商:
- Vishay
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 39.3A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SO-8 | |
| Series | SiJ462ADP | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 7.2mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 22.3W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.25mm | |
| Width | 1.14mm | |
| Standards/Approvals | No | |
| Height | 6.25mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 39.3A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SO-8 | ||
Series SiJ462ADP | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 7.2mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 22.3W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Length 5.25mm | ||
Width 1.14mm | ||
Standards/Approvals No | ||
Height 6.25mm | ||
Automotive Standard No | ||
The Vishay N-Channel 60 V (D-S) MOSFET has a very low Qg and Qoss reduce power loss and improve efficiency. It's flexible leads provide resilience to mechanical stress.
TrenchFET Gen IV power MOSFET
100 % Rg and UIS tested
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