Vishay TrenchFET Type N-Channel MOSFET, 60 A, 30 V Enhancement, 8-Pin PowerPAK SO-8 SiRA10BDP-T1-GE3
- RS庫存編號:
- 735-112
- 製造零件編號:
- SiRA10BDP-T1-GE3
- 製造商:
- Vishay
N
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 組，共 1 件）*
TWD42.00
(不含稅)
TWD44.10
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年9月07日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
膠帶 | 每膠帶 |
|---|---|
| 1 - 24 | TWD42.00 |
| 25 - 99 | TWD28.00 |
| 100 + | TWD14.00 |
* 參考價格
- RS庫存編號:
- 735-112
- 製造零件編號:
- SiRA10BDP-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | TrenchFET | |
| Package Type | PowerPAK SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.005Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 24.1nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 43W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Width | 5.3mm | |
| Length | 6.25mm | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series TrenchFET | ||
Package Type PowerPAK SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.005Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 24.1nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 43W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Width 5.3mm | ||
Length 6.25mm | ||
Height 1.1mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TW
The Vishay N channel MOSFET is designed for efficient and reliable power switching in high-performance power electronics. it is fully Rg and UIS tested to ensure robustness under electrical stress and demanding operating conditions. optimized for low losses and fast switching, it supports Compact high power density designs while meeting RoHS compliant and halogen free requirements.
Offers 100 percent Rg and UIS testing for proven device reliability
Supports high power density dc/dc converter applications
Enables efficient synchronous rectification performance
Complies with RoHS standards and halogen free requirements
相關連結
- Vishay TrenchFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK SO-8 SiRA18BDP-T1-GE3
- Vishay TrenchFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK SO-8 SiRA12BDP-T1-GE3
- Vishay TrenchFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK SO-8 SIRA14BDP-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK SO-8 SI7149ADP-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK SO-8
- Vishay Single TrenchFET Type P-Channel MOSFET 30 V, 8-Pin PowerPAK SO-8 SI7139DP-T1-GE3
- Vishay TrenchFET P-Channel MOSFET -20 V Enhancement, 8-Pin PowerPAK SO-8 SIR5207DP-T1-UE3
- Vishay TrenchFET P-Channel MOSFET -20 V Enhancement, 8-Pin PowerPAK SO-8 SIR5203DP-T1-UE3