Vishay TrenchFET Type N-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin PowerPAK SO-8 SIRA14BDP-T1-GE3

N

此圖片僅供參考,請參閲產品詳細資訊及規格

可享批量折扣

小計(1 組,共 1 件)*

TWD20.00

(不含稅)

TWD21.00

(含稅)

Add to Basket
選擇或輸入數量
暫時缺貨
  • 2026年8月17日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

膠帶
每膠帶
1 - 24TWD20.00
25 - 99TWD13.00
100 +TWD7.00

* 參考價格

RS庫存編號:
735-115
製造零件編號:
SIRA14BDP-T1-GE3
製造商:
Vishay
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

PowerPAK SO-8

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.0105Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

12.2nC

Maximum Power Dissipation Pd

17W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Height

1.1mm

Length

6.25mm

Width

5.3mm

Automotive Standard

No

COO (Country of Origin):
TW
The Vishay N channel MOSFET is designed for efficient and reliable power switching in high-performance power electronics. it is fully Rg and UIS tested to ensure robustness under electrical stress and demanding operating conditions. optimized for low losses and fast switching, it supports Compact high power density designs while meeting RoHS compliant and halogen free requirements.

Offers 100 percent Rg and UIS testing for proven device reliability

Supports high power density dc/dc converter applications

Enables efficient synchronous rectification performance

Complies with RoHS standards and halogen free requirements

相關連結